march 2013 FDD050N03B n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 www.fairchildsemi.com 1 FDD050N03B n-channel powertrench ? mosfet 30 v, 90 a, 5.0 m features ?r ds(on) = 3.7 m ( typ.)@ v gs = 10 v, i d = 25 a ? fast switching speed ? low gate charge, q g = 33 nc( typ.) ? high performance trench technology for ex tremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductor ? ?s advance powertrench ? process that has been tailored to minimize the on-state resistance while maintain- ing superior switching performance. applications ? synchronous rectification for atx / server / telecom psu mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDD050N03B unit v dss drain to source voltage 30 v v gss gate to source voltage 16 v i d drain current - continuous (t c = 25 o c, silicon limited) 90* a - continuous (t c = 100 o c, silicon limited) 63* - continuous (t c = 25 o c, package limited) 50 i dm drain current - pulsed (note 1) 360 a e as single pulsed avalanche energy (note 2) 72 mj dv/dt peak diode recovery dv/dt (note 3) 2 v/ns p d power dissipation (t c = 25 o c) 65 w - derate above 25 o c0.43w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDD050N03B unit r jc thermal resistance, junction to case, max. 2.3 o c/w r ja thermal resistance, junction to ambient, max. (note 5) 40 *calculated continuous current based on maximum allowable junction temperature. package limitation current is 50a. d g s d-pak (to-252) g s d
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDD050N03B FDD050N03B d-pak 330mm 16mm 2500 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c30 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-13-mv/ o c i dss zero gate voltage drain current v ds = 24v, v gs = 0v - - 1 a i gss gate to body leakage current v gs = 16v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 1.25 2.0 3.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 25a - 3.7 5.0 m v gs = 4.5v, i d = 15a - 5.2 8.1 g fs forward transconductance v ds = 5v, i d = 50a - 169 - s c iss input capacitance v ds = 15v, v gs = 0v f = 1mhz - 2160 2875 pf c oss output capacitance - 805 1070 pf c rss reverse transfer capacitance - 85 130 pf q g(tot) total gate charge at 10v v dd = 15v, i d = 50a v gs = 10v (note 4) -3343nc q gs gate to source gate charge - 7.8 - nc q gs2 gate charge threshold to plateau - 3.8 - nc q gd gate to drain ?miller? charge - 4.6 - nc t d(on) turn-on delay time v dd = 15v, i d = 50a v gs = 10v, r gen = 4.7 (note 4) -14.539ns t r turn-on rise time - 4.5 18 ns t d(off) turn-off delay time - 30 70 ns t f turn-off fall time - 4.5 19 ns i s maximum continuous drain to source diode forward current - - 90* a i sm maximum pulsed drain to source diode forward current - - 360 a v sd drain to source diode forward voltage v gs = 0v, i sd = 50a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 50a di f /dt = 100a/ s -33-ns q rr reverse recovery charge - 19 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 1mh, i as = 12a, v dd = 27v, r g = 25 , starting t j = 25 c 3. i sd 50a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics 5. when mounted on a 1 in 2 pad of 2 oz copper
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 4 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v 3.0 v i d , drain current[a] v ds , drain-source voltage[v] 12345 0.1 1 10 100 300 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 50 100 150 200 250 3 4 5 6 7 8 9 10 *notes: t c = 25 o c v gs = 4.5v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0 5 10 15 20 25 30 35 0 2 4 6 8 10 *notes: i d = 50a v ds = 6v v ds = 15v v ds = 24v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 0 1000 2000 3000 4000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 25a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 20 40 60 80 100 i d , drain current [a] t c , case temperature [ o c ] r jc = 2.3 o c/w limited by package 0.1 1 10 50 0.1 1 10 100 400 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 100ms 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2.9 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD050N03B n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2009 fairchild semiconductor corporation FDD050N03B rev. c0 mechanical dimensions dimensions in millimeters d-pak
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